Effects of aluminum on epitaxial graphene grown on C-face SiC

Effects of aluminum on epitaxial graphene grown on C-face SiC

Properties of epitaxial graphene grown on C-face SiC compared to Si-face

Stacking of adjacent graphene layers grown on C-face SiC

Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC

The atomic force microscope (AFM) is used to study the morphology of graphene grown on 4H-SiC(0001̄). A mesh-like network of ridges with high curvature is revealed that bound atomically flat, tile-like facets of few-layer graphene (FLG). To further study the structural properties of the ridge network, nanomanipulation experiments are performed using an AFM tip to deform the ridges in both the ve...

Effects of Al on epitaxial graphene grown on 6H-SiC(0001)

Aluminum was deposited on epitaxial monolayer-grown graphene on SiC (0001). The effects of annealing up to 1200 °C on the surface and interface morphology, chemical composition, and electron band structure were analyzed in situ by synchrotron-based techniques at the MAX Laboratory. After heating at around 400 °C, Al islands or droplets are observed on the surface and the collected Si 2p, Al 2p,...